3D NAND: The Evolution Ahead
Explore 3D NAND evolution: 1,000-layer chips, z-pitch scaling, air gaps & charge-trap cutting that cut cost/bit and boost density for AI/cloud storage.
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Since its introduction to the memory market in the late 1980s, NAND flash has fundamentally transformed the way large volumes of data are stored and retrieved.
This non-volatile memory, designed specifically for high-density data storage, is applied across virtually every sector of the electronics market, from smartphones to data centers. It is used in most removable and portable storage devices, such as SD cards and USB drives. In recent years, 3D NAND has also played a critical role in the booming development of artificial intelligence, providing efficient storage solutions for the massive datasets required to train AI models.
With the explosive growth in data storage demand, chip companies are racing to increase the storage cell density of NAND flash (measured in gigabits per square millimeter, Gb/mm²) while reducing cost per bit. More than a decade ago, the semiconductor industry transitioned from two-dimensional NAND to three-dimensional NAND to overcome the limitations of traditional memory scaling. In recent years, companies have improved storage density by increasing the number of memory cell layers per chip and the number of bits stored per cell (with commercial NAND flash reaching up to four bits per cell).
One of the most significant advancements is the shift from floating-gate transistors to charge-trap cells. Floating-gate technology stores charge in a conductor, whereas charge-trap cells store charge in an insulator. This reduces electrostatic coupling between memory cells, thereby improving read/write performance. Additionally, because charge-trap cells can be fabricated at smaller dimensions than floating-gate transistors, they pave the way for higher storage density.
